All MOSFET. PTA22N60 Datasheet

 

PTA22N60 Datasheet and Replacement


   Type Designator: PTA22N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 255 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-220F
 

 PTA22N60 substitution

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PTA22N60 Datasheet (PDF)

 ..1. Size:1289K  pipsemi
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PTA22N60

PTA22N60 600V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 600V 300m 22A RDS(ON),typ.=300 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS G D S Ordering Information Part Number Package Brand TO-220F Package P

 7.1. Size:1002K  pipsemi
 pta22n65.pdf pdf_icon

PTA22N60

PTA22N65 650V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 650V 350m 22A RDS(ON),typ.=350 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS G D S Ordering Information Part Number Package Brand TO-220F Package P

Datasheet: PSD07N65 , PTA04N100 , PTA04N80 , PTA05N65 , PTA07N65B , PTA08N100 , PTA09N45 , PTA13N45 , 12N60 , PTA22N65 , PTA25N50 , PTA26N60 , PTA26N65 , PTA26N70 , PTA28N50 , PTF12N90 , PTF27N80 .

History: WMN25N65EM | JFAM20N60E | SIHB20N50E | H5N60F | AP06P20GJ-HF

Keywords - PTA22N60 MOSFET datasheet

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