PTA25N50 Specs and Replacement
Type Designator: PTA25N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO-220F
PTA25N50 substitution
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PTA25N50 datasheet
pta25n50.pdf
PTA25N50 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 500V 210m 25A RDS(ON),typ.=210 m @VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS G D S Ordering Information Part Number Package Brand TO-220F Package P... See More ⇒
Detailed specifications: PTA04N80 , PTA05N65 , PTA07N65B , PTA08N100 , PTA09N45 , PTA13N45 , PTA22N60 , PTA22N65 , IRF9540N , PTA26N60 , PTA26N65 , PTA26N70 , PTA28N50 , PTF12N90 , PTF27N80 , PTH03N150 , PTA03N150 .
Keywords - PTA25N50 MOSFET specs
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