All MOSFET. PTF12N90 Datasheet

 

PTF12N90 Datasheet and Replacement


   Type Designator: PTF12N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 175 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-247
 

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PTF12N90 Datasheet (PDF)

 ..1. Size:391K  pipsemi
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PTF12N90

PTF12N90 900V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 900V 750m 12A RDS(ON),typ.=750 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder G High Efficiency SMPS D S Ordering Information Part Number Package Brand TO-247 Package PT

 8.1. Size:7543K  cn puolop
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PTF12N90

PTF1 2N6565 0V/1 2A N-Channel A dv anced Power MOSFETFeatures RDS(on) (Typical 0.5 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)G D STO-220FAbsolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above

Datasheet: PTA13N45 , PTA22N60 , PTA22N65 , PTA25N50 , PTA26N60 , PTA26N65 , PTA26N70 , PTA28N50 , 8205A , PTF27N80 , PTH03N150 , PTA03N150 , PTP01N04N , PTP02N03N , PTP02N04N , PTP02N04NB , PTP04N04A .

History: MME80R290PRH | DH009N02P | SWB072R08ET | 4N80G-TND-R | STL23NM50N | CJ3406 | GSM4925WS

Keywords - PTF12N90 MOSFET datasheet

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