PTF12N90 Datasheet. Specs and Replacement
Type Designator: PTF12N90 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 175 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-247
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PTF12N90 substitution
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PTF12N90 datasheet
ptf12n90.pdf
PTF12N90 900V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 900V 750m 12A RDS(ON),typ.=750 m @VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder G High Efficiency SMPS D S Ordering Information Part Number Package Brand TO-247 Package PT... See More ⇒
ptf12n65.pdf
PTF1 2N65 65 0V/1 2A N-Channel A dv anced Power MOSFET Features RDS(on) (Typical 0.5 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G D S TO-220F Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above... See More ⇒
Detailed specifications: PTA13N45, PTA22N60, PTA22N65, PTA25N50, PTA26N60, PTA26N65, PTA26N70, PTA28N50, IRFP260, PTF27N80, PTH03N150, PTA03N150, PTP01N04N, PTP02N03N, PTP02N04N, PTP02N04NB, PTP04N04A
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