All MOSFET. PTF27N80 Datasheet

 

PTF27N80 MOSFET. Datasheet pdf. Equivalent


   Type Designator: PTF27N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 650 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 180 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO-247

 PTF27N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PTF27N80 Datasheet (PDF)

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 ptf27n80.pdf

PTF27N80 PTF27N80

PTF27N80 800V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 800V 280m 27A RDS(ON),typ.=280 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS Ordering Information Part Number Package Brand PTF27N80 TO-247 Absolute Max

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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