PTF27N80 Datasheet and Replacement
Type Designator: PTF27N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 650 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 650 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO-247
PTF27N80 substitution
PTF27N80 Datasheet (PDF)
ptf27n80.pdf

PTF27N80 800V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 800V 280m 27A RDS(ON),typ.=280 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS Ordering Information Part Number Package Brand PTF27N80 TO-247 Absolute Max
Datasheet: PTA22N60 , PTA22N65 , PTA25N50 , PTA26N60 , PTA26N65 , PTA26N70 , PTA28N50 , PTF12N90 , 2SK3568 , PTH03N150 , PTA03N150 , PTP01N04N , PTP02N03N , PTP02N04N , PTP02N04NB , PTP04N04A , PTP08N06N .
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