All MOSFET. PTF27N80 Datasheet

 

PTF27N80 Datasheet and Replacement


   Type Designator: PTF27N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 650 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO-247
 

 PTF27N80 substitution

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PTF27N80 Datasheet (PDF)

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PTF27N80

PTF27N80 800V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 800V 280m 27A RDS(ON),typ.=280 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS Ordering Information Part Number Package Brand PTF27N80 TO-247 Absolute Max

Datasheet: PTA22N60 , PTA22N65 , PTA25N50 , PTA26N60 , PTA26N65 , PTA26N70 , PTA28N50 , PTF12N90 , 2SK3568 , PTH03N150 , PTA03N150 , PTP01N04N , PTP02N03N , PTP02N04N , PTP02N04NB , PTP04N04A , PTP08N06N .

History: EFC2J004NUZ | AOD444 | IPC100N04S5-1R2 | DCC016M120G3 | FDMS3668S | AOD468 | AP15P10GI

Keywords - PTF27N80 MOSFET datasheet

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