PTP01N04N Datasheet. Specs and Replacement

Type Designator: PTP01N04N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 345 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 1600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm

Package: TO-220

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PTP01N04N datasheet

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PTP01N04N

PTP01N04N 40V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 40V 1.3m 345A Ultra-low Miller Charge RDS(ON),typ.=1.3 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification Motor Drive Ordering Information Part Number ... See More ⇒

Detailed specifications: PTA26N60, PTA26N65, PTA26N70, PTA28N50, PTF12N90, PTF27N80, PTH03N150, PTA03N150, K4145, PTP02N03N, PTP02N04N, PTP02N04NB, PTP04N04A, PTP08N06N, PTP08N06NB, PTP08N08NA, PTP08N65

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