PTP01N04N Datasheet and Replacement
Type Designator: PTP01N04N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 345 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 1600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
Package: TO-220
PTP01N04N substitution
PTP01N04N Datasheet (PDF)
ptp01n04n.pdf
PTP01N04N 40V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 40V 1.3m 345A Ultra-low Miller Charge RDS(ON),typ.=1.3 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification Motor Drive Ordering Information Part Number
Datasheet: PTA26N60 , PTA26N65 , PTA26N70 , PTA28N50 , PTF12N90 , PTF27N80 , PTH03N150 , PTA03N150 , K4145 , PTP02N03N , PTP02N04N , PTP02N04NB , PTP04N04A , PTP08N06N , PTP08N06NB , PTP08N08NA , PTP08N65 .
History: PJU2NA60H | TK11A65W | TK11Q65W | AOT466L | 6N65KL-TND-R | JCS7N70B | RU2H30S
Keywords - PTP01N04N MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: PJU2NA60H | TK11A65W | TK11Q65W | AOT466L | 6N65KL-TND-R | JCS7N70B | RU2H30S
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