All MOSFET. PTP01N04N Datasheet

 

PTP01N04N Datasheet and Replacement


   Type Designator: PTP01N04N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 345 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 1600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
   Package: TO-220
 

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PTP01N04N Datasheet (PDF)

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PTP01N04N

PTP01N04N 40V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 40V 1.3m 345A Ultra-low Miller Charge RDS(ON),typ.=1.3 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification Motor Drive Ordering Information Part Number

Datasheet: PTA26N60 , PTA26N65 , PTA26N70 , PTA28N50 , PTF12N90 , PTF27N80 , PTH03N150 , PTA03N150 , IRFB3607 , PTP02N03N , PTP02N04N , PTP02N04NB , PTP04N04A , PTP08N06N , PTP08N06NB , PTP08N08NA , PTP08N65 .

History: SKI03087

Keywords - PTP01N04N MOSFET datasheet

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