PTP01N04N MOSFET. Datasheet pdf. Equivalent
Type Designator: PTP01N04N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 345 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 148 nC
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 1600 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0015 Ohm
Package: TO-220
PTP01N04N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTP01N04N Datasheet (PDF)
..1. Size:526K pipsemi
ptp01n04n.pdf
ptp01n04n.pdf
PTP01N04N 40V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 40V 1.3m 345A Ultra-low Miller Charge RDS(ON),typ.=1.3 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification Motor Drive Ordering Information Part Number
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
