PTP04N04A Datasheet. Specs and Replacement

Type Designator: PTP04N04A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 333 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 206 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 1700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO-220

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PTP04N04A datasheet

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PTP04N04A

PTP04N04A 40V N-Channel Planar MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 40V 4.0m 206A RDS(ON),typ.=4.0m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications DC-DC Converters DC-AC Inverters G Power Supply D S TO-220 Ordering Information Part Number Package Brand Package No to ... See More ⇒

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PTP04N04A

PTP04N04N 40V N-Channel Trench MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Trench Technology 40V 3.0m 206A RDS(ON),typ.=3.0m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications DC-DC Converters DC-AC Inverters G Power Supply D S TO-220 Ordering Information Package No to Scale Part Number Packag... See More ⇒

Detailed specifications: PTF12N90, PTF27N80, PTH03N150, PTA03N150, PTP01N04N, PTP02N03N, PTP02N04N, PTP02N04NB, 20N50, PTP08N06N, PTP08N06NB, PTP08N08NA, PTP08N65, PTA08N65, PTP09N50, PTA09N50, PTP09N90

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