PTP04N04A MOSFET. Datasheet pdf. Equivalent
Type Designator: PTP04N04A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 206 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 96 nC
trⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 1700 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO-220
PTP04N04A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTP04N04A Datasheet (PDF)
ptp04n04a.pdf
PTP04N04A 40V N-Channel Planar MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 40V 4.0m 206A RDS(ON),typ.=4.0m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications DC-DC Converters DC-AC Inverters G Power Supply D S TO-220 Ordering Information Part Number Package Brand Package No to
ptp04n04n.pdf
PTP04N04N 40V N-Channel Trench MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Trench Technology 40V 3.0m 206A RDS(ON),typ.=3.0m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications DC-DC Converters DC-AC Inverters G Power Supply D S TO-220 Ordering Information Package No to Scale Part Number Packag
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