PTP04N04A Datasheet and Replacement
Type Designator: PTP04N04A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 206 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 1700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO-220
PTP04N04A substitution
PTP04N04A Datasheet (PDF)
ptp04n04a.pdf
PTP04N04A 40V N-Channel Planar MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 40V 4.0m 206A RDS(ON),typ.=4.0m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications DC-DC Converters DC-AC Inverters G Power Supply D S TO-220 Ordering Information Part Number Package Brand Package No to
ptp04n04n.pdf
PTP04N04N 40V N-Channel Trench MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Trench Technology 40V 3.0m 206A RDS(ON),typ.=3.0m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications DC-DC Converters DC-AC Inverters G Power Supply D S TO-220 Ordering Information Package No to Scale Part Number Packag
Datasheet: PTF12N90 , PTF27N80 , PTH03N150 , PTA03N150 , PTP01N04N , PTP02N03N , PTP02N04N , PTP02N04NB , IRF4905 , PTP08N06N , PTP08N06NB , PTP08N08NA , PTP08N65 , PTA08N65 , PTP09N50 , PTA09N50 , PTP09N90 .
History: APT32M80J
Keywords - PTP04N04A MOSFET datasheet
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History: APT32M80J
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