PTB14508E MOSFET. Datasheet pdf. Equivalent
Type Designator: PTB14508E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 273 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 145 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 420 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: TO-263
PTB14508E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTB14508E Datasheet (PDF)
..1. Size:560K pipsemi
ptp14508e ptb14508e.pdf
ptp14508e ptb14508e.pdf
PTP14508E PTB14508E Pb Lead Free Package 80V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 80V 4.8m 145A RDS(ON),typ.=4.8 m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification G G D UPS Inverter D S S Order
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