All MOSFET. PTB14508E Datasheet

 

PTB14508E Datasheet and Replacement


   Type Designator: PTB14508E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 273 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 145 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO-263
 

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PTB14508E Datasheet (PDF)

 ..1. Size:560K  pipsemi
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PTB14508E

PTP14508E PTB14508E Pb Lead Free Package 80V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 80V 4.8m 145A RDS(ON),typ.=4.8 m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification G G D UPS Inverter D S S Order

Datasheet: PTA12N65 , PTP13N50B , PTA13N50B , PTP13N60 , PTA13N60 , PTP13N65 , PTA13N65 , PTP14508E , AO3401 , PTP15N50 , PTA15N50 , PTP16N06N , PTL16N06N , PTP16N60 , PTA16N60 , PTP16N65 , PTA16N65 .

History: SVS11N65SD2 | BLP04N10-B | RQA0008NXAQS | AM2394NE | HG3P095N25S | S-LNTK2575LT1G | NCEAP01P35AK

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