PTB14508E Datasheet. Specs and Replacement
Type Designator: PTB14508E 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 273 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 145 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 420 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: TO-263
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PTB14508E datasheet
ptp14508e ptb14508e.pdf
PTP14508E PTB14508E Pb Lead Free Package 80V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 80V 4.8m 145A RDS(ON),typ.=4.8 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification G G D UPS Inverter D S S Order... See More ⇒
Detailed specifications: PTA12N65, PTP13N50B, PTA13N50B, PTP13N60, PTA13N60, PTP13N65, PTA13N65, PTP14508E, P60NF06, PTP15N50, PTA15N50, PTP16N06N, PTL16N06N, PTP16N60, PTA16N60, PTP16N65, PTA16N65
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