PTP15N50 Datasheet. Specs and Replacement

Type Designator: PTP15N50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: TO-220

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PTP15N50 datasheet

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PTP15N50

PTP15N50 PTA15N50 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 500V 0.33 15A RDS(ON),typ.=0.33 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor TV Main Power SMPS Power Supply LCD Panel Power Ordering Information Part Number Package Bran... See More ⇒

Detailed specifications: PTP13N50B, PTA13N50B, PTP13N60, PTA13N60, PTP13N65, PTA13N65, PTP14508E, PTB14508E, IRF730, PTA15N50, PTP16N06N, PTL16N06N, PTP16N60, PTA16N60, PTP16N65, PTA16N65, PTP18N20A

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