PTL16N06N Datasheet and Replacement
Type Designator: PTL16N06N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO-262
PTL16N06N substitution
PTL16N06N Datasheet (PDF)
ptp16n06n ptl16n06n.pdf

PTP16N06N PTL16N06N 60V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Trench Technology 60V 13.5m 55A RDS(ON),typ.=13.5 m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Automotive DC Motor Control Class D Amplifier Ordering Information Part Number Package Brand PTP16N
Datasheet: PTA13N60 , PTP13N65 , PTA13N65 , PTP14508E , PTB14508E , PTP15N50 , PTA15N50 , PTP16N06N , IRFZ48N , PTP16N60 , PTA16N60 , PTP16N65 , PTA16N65 , PTP18N20A , PTP20N40B , PTA20N40B , PTP20N50A .
History: 2N65KL-TM3-T | NVMFS5C410N | DHB16N06 | AP60SL650AFI | BLP04N10-P | APT5014B2VFRG | SM140R50CT1TL
Keywords - PTL16N06N MOSFET datasheet
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History: 2N65KL-TM3-T | NVMFS5C410N | DHB16N06 | AP60SL650AFI | BLP04N10-P | APT5014B2VFRG | SM140R50CT1TL



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