All MOSFET. PTP18N20A Datasheet

 

PTP18N20A Datasheet and Replacement


   Type Designator: PTP18N20A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 34 nC
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-220
 

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PTP18N20A Datasheet (PDF)

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PTP18N20A

PTP18N20A 200V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 200V 120m 18A RDS(ON),typ.=120m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications CRT, TV/Monitor Other Applications S G D Ordering Information Part Number Package Brand PTP18N20A TO-220 Absolut

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Keywords - PTP18N20A MOSFET datasheet

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