PTP18N20A MOSFET. Datasheet pdf. Equivalent
Type Designator: PTP18N20A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 34 nC
trⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 158 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-220
PTP18N20A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTP18N20A Datasheet (PDF)
..1. Size:769K pipsemi
ptp18n20a.pdf
ptp18n20a.pdf
PTP18N20A 200V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 200V 120m 18A RDS(ON),typ.=120m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications CRT, TV/Monitor Other Applications S G D Ordering Information Part Number Package Brand PTP18N20A TO-220 Absolut
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