PTP18N20A Datasheet. Specs and Replacement

Type Designator: PTP18N20A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 158 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-220

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PTP18N20A datasheet

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PTP18N20A

PTP18N20A 200V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 200V 120m 18A RDS(ON),typ.=120m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications CRT, TV/Monitor Other Applications S G D Ordering Information Part Number Package Brand PTP18N20A TO-220 Absolut... See More ⇒

Detailed specifications: PTP15N50, PTA15N50, PTP16N06N, PTL16N06N, PTP16N60, PTA16N60, PTP16N65, PTA16N65, IRF830, PTP20N40B, PTA20N40B, PTP20N50A, PTA20N50A, PTP20N60, PTA20N60, PTP20N60A, PTA20N60A

Keywords - PTP18N20A MOSFET specs

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