STV60N06 MOSFET. Datasheet pdf. Equivalent

   Type Designator: STV60N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 68 nC
   trⓘ - Rise Time: 500 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SO10

Datasheet: STV50N06 , STV55N05L , STV55N06L , STV5NA50 , STV5NA80 , STV60N03L-12 , STV60N05 , STV60N05-16 , EMB04N03H , STV6NA60 , STV7NA40 , STV7NA60 , STV8NA50 , STW12N60 , STW12NA50 , STW14N50 , STW15N50 .