PTP40N20 Datasheet and Replacement
Type Designator: PTP40N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 305 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO-220
PTP40N20 substitution
PTP40N20 Datasheet (PDF)
ptp40n20.pdf

PTP40N20 200V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 200V 50m 40A RDS(ON),typ.=50m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications DC-DC Converters G D S DC-AC Inverters for UPS SMPS and Motor controls TO-220 Ordering Information Package Not
Datasheet: PTA20N60 , PTP20N60A , PTA20N60A , PTP20N65A , PTA20N65A , PTP20N70A , PTA20N70A , PTP23N10A , IRFP064N , PTP540 , PTP9506E , PTB9506E , PTW09N90 , PTW20N50A , PTW28N50 , PTW30N50EL , PTW36N60 .
History: IPP05CN10N | AP9685GM | VB7638 | DMN2041LSD | TPM4105EC6 | RQK2501YGDQA | IRF9328
Keywords - PTP40N20 MOSFET datasheet
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History: IPP05CN10N | AP9685GM | VB7638 | DMN2041LSD | TPM4105EC6 | RQK2501YGDQA | IRF9328



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