PTP9506E MOSFET. Datasheet pdf. Equivalent
Type Designator: PTP9506E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 95 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 70 nC
trⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 280 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO-220
PTP9506E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTP9506E Datasheet (PDF)
..1. Size:561K pipsemi
ptp9506e ptb9506e.pdf
ptp9506e ptb9506e.pdf
PTP9506E PTB9506E 68V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 68V 6.5m 95A RDS(ON),typ.=6.5 m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters G Synchronous Rectification G D S D UPS Inverter S Ordering Information TO-220 &
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
