All MOSFET. PTP9506E Datasheet

 

PTP9506E MOSFET. Datasheet pdf. Equivalent


   Type Designator: PTP9506E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 95 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 70 nC
   trⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO-220

 PTP9506E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PTP9506E Datasheet (PDF)

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 ptp9506e ptb9506e.pdf

PTP9506E PTP9506E

PTP9506E PTB9506E 68V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 68V 6.5m 95A RDS(ON),typ.=6.5 m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters G Synchronous Rectification G D S D UPS Inverter S Ordering Information TO-220 &

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