PTB9506E Datasheet. Specs and Replacement
Type Designator: PTB9506E 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 95 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 280 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO-263
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PTB9506E datasheet
ptp9506e ptb9506e.pdf
PTP9506E PTB9506E 68V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 68V 6.5m 95A RDS(ON),typ.=6.5 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters G Synchronous Rectification G D S D UPS Inverter S Ordering Information TO-220 &... See More ⇒
Detailed specifications: PTP20N65A, PTA20N65A, PTP20N70A, PTA20N70A, PTP23N10A, PTP40N20, PTP540, PTP9506E, IRF740, PTW09N90, PTW20N50A, PTW28N50, PTW30N50EL, PTW36N60, PTW50N20, PTW69N30, PTW90N20
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