All MOSFET. PTB9506E Datasheet

 

PTB9506E Datasheet and Replacement


   Type Designator: PTB9506E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 95 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO-263
 

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PTB9506E Datasheet (PDF)

 ..1. Size:561K  pipsemi
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PTB9506E

PTP9506E PTB9506E 68V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 68V 6.5m 95A RDS(ON),typ.=6.5 m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters G Synchronous Rectification G D S D UPS Inverter S Ordering Information TO-220 &

Datasheet: PTP20N65A , PTA20N65A , PTP20N70A , PTA20N70A , PTP23N10A , PTP40N20 , PTP540 , PTP9506E , IRF740 , PTW09N90 , PTW20N50A , PTW28N50 , PTW30N50EL , PTW36N60 , PTW50N20 , PTW69N30 , PTW90N20 .

History: ME20P06 | SWD30N06 | IRL620PBF | CS4N65 | 2SK811 | SI7113ADN | FDD9410F085

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