PTW28N50 Specs and Replacement
Type Designator: PTW28N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 1410 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: TO-3P
PTW28N50 substitution
- MOSFET ⓘ Cross-Reference Search
PTW28N50 datasheet
ptw28n50.pdf
PTW28N50 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 500V 170m 28A RDS(ON),typ.=170 m @VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS Ordering Information Part Number Package Brand PTW28N50 TO-3P Absolute Maxim... See More ⇒
Detailed specifications: PTA20N70A, PTP23N10A, PTP40N20, PTP540, PTP9506E, PTB9506E, PTW09N90, PTW20N50A, IRF540N, PTW30N50EL, PTW36N60, PTW50N20, PTW69N30, PTW90N20, SPTA60R130E, SPTA65R350E, SPTP65R160
Keywords - PTW28N50 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: 4N60KL-TA3-T | IRFF9133 | 4N100G-TA3-T
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