PTW69N30 MOSFET. Datasheet pdf. Equivalent
Type Designator: PTW69N30
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 520 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 69 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 150 nC
trⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 850 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
Package: TO-3P
PTW69N30 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTW69N30 Datasheet (PDF)
..1. Size:660K pipsemi
ptw69n30.pdf
ptw69n30.pdf
PTW69N30 300V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 300V 35m 69A RDS(ON),typ.=35 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver G D Electric Welder S High Efficiency SMPS TO-3P Ordering Information Package Not to Scale Part Number Packag
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
