PTW69N30 PDF and Equivalents Search

 

PTW69N30 Specs and Replacement

Type Designator: PTW69N30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 69 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 850 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm

Package: TO-3P

PTW69N30 substitution

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PTW69N30 datasheet

 ..1. Size:660K  pipsemi
 ptw69n30.pdf pdf_icon

PTW69N30

PTW69N30 300V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 300V 35m 69A RDS(ON),typ.=35 m @VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver G D Electric Welder S High Efficiency SMPS TO-3P Ordering Information Package Not to Scale Part Number Packag... See More ⇒

Detailed specifications: PTP9506E, PTB9506E, PTW09N90, PTW20N50A, PTW28N50, PTW30N50EL, PTW36N60, PTW50N20, IRFZ44, PTW90N20, SPTA60R130E, SPTA65R350E, SPTP65R160, SPTA65R160, RU1H150R, RU1H150S, RU206B

Keywords - PTW69N30 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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