All MOSFET. PTW90N20 Datasheet

 

PTW90N20 Datasheet and Replacement


   Type Designator: PTW90N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 580 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 94 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO-3P
 

 PTW90N20 substitution

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PTW90N20 Datasheet (PDF)

 ..1. Size:807K  pipsemi
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PTW90N20

PTW90N20 200V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 200V 18m 94A RDS(ON),typ.=18 m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications DC-DC Converters G D DC-AC Inverters for UPS S SMPS and Motor controls TO-3P Ordering Information Package No

Datasheet: PTB9506E , PTW09N90 , PTW20N50A , PTW28N50 , PTW30N50EL , PTW36N60 , PTW50N20 , PTW69N30 , IRFP460 , SPTA60R130E , SPTA65R350E , SPTP65R160 , SPTA65R160 , RU1H150R , RU1H150S , RU206B , RU207C .

History: PTP14508E | HCS90R450S | FHP40N20C | PTP9506E | PTP16N06N

Keywords - PTW90N20 MOSFET datasheet

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