SPTA65R350E MOSFET. Datasheet pdf. Equivalent
Type Designator: SPTA65R350E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 31.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO-220F
SPTA65R350E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPTA65R350E Datasheet (PDF)
spta65r350e.pdf
SPTA65R350E 650V N-ch Multi-Epi Super-Junction MOSFET RDS(ON),typ. ID General Features BVDSS@TjMAX Multi-Epi Process 700V 0.32 12A Proprietary New Super-Junction Technology RDS(ON),typ.=0.32@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S SMPS Standby Power TO-220F Ordering Information Pa
sptp65r160 spta65r160.pdf
SPTP65R160 SPTA65R160 650V N-ch Super-Junction MOSFET General Features BVDSS@ T ID J=150 RDS(ON),typ. Proprietary New Super-Junction Technology 700V 0.16 20A RDS(ON),typ.=0.16 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Inf
spta60r130e.pdf
SPTA60R130E 600V N-ch Multi-Epi Super-Junction MOSFET RDS(ON),typ. ID General Features BVDSS@TjMAX Multi-Epi Process 650V 0.11 25A Proprietary New Super-Junction Technology RDS(ON),typ.=0.11@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor G Charger D S SMPS Standby Power TO-220F Ordering Information
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
