SPTA65R350E - параметры транзистора MOSFET, его аналоги, datasheet

SPTA65R350E Datasheet (PDF)

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SPTA65R350E 650V N-ch Multi-Epi Super-Junction MOSFET RDS(ON),typ. ID General Features BVDSS@TjMAX Multi-Epi Process 700V 0.32 12A Proprietary New Super-Junction Technology RDS(ON),typ.=0.32@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S SMPS Standby Power TO-220F Ordering Information Pa

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SPTP65R160 SPTA65R160 650V N-ch Super-Junction MOSFET General Features BVDSS@ T ID J=150 RDS(ON),typ. Proprietary New Super-Junction Technology 700V 0.16 20A RDS(ON),typ.=0.16 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Inf

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SPTA60R130E 600V N-ch Multi-Epi Super-Junction MOSFET RDS(ON),typ. ID General Features BVDSS@TjMAX Multi-Epi Process 650V 0.11 25A Proprietary New Super-Junction Technology RDS(ON),typ.=0.11@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor G Charger D S SMPS Standby Power TO-220F Ordering Information

Другие MOSFET... PTW20N50A , PTW28N50 , PTW30N50EL , PTW36N60 , PTW50N20 , PTW69N30 , PTW90N20 , SPTA60R130E , IRFP260N , SPTP65R160 , SPTA65R160 , RU1H150R , RU1H150S , RU206B , RU207C , RU20C10H , RU20P4C6 .