SPTP65R160 Specs and Replacement
Type Designator: SPTP65R160
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 220 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-220
SPTP65R160 substitution
- MOSFET ⓘ Cross-Reference Search
SPTP65R160 datasheet
sptp65r160 spta65r160.pdf
SPTP65R160 SPTA65R160 650V N-ch Super-Junction MOSFET General Features BVDSS@ T ID J=150 RDS(ON),typ. Proprietary New Super-Junction Technology 700V 0.16 20A RDS(ON),typ.=0.16 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Inf... See More ⇒
Detailed specifications: PTW28N50, PTW30N50EL, PTW36N60, PTW50N20, PTW69N30, PTW90N20, SPTA60R130E, SPTA65R350E, IRFB4110, SPTA65R160, RU1H150R, RU1H150S, RU206B, RU207C, RU20C10H, RU20P4C6, RU20P7C
Keywords - SPTP65R160 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: KX6N70F | 2SK737 | SM1F04NSFP
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