All MOSFET. SPTP65R160 Datasheet

 

SPTP65R160 Datasheet and Replacement


   Type Designator: SPTP65R160
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-220
 

 SPTP65R160 substitution

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SPTP65R160 Datasheet (PDF)

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SPTP65R160

SPTP65R160 SPTA65R160 650V N-ch Super-Junction MOSFET General Features BVDSS@ T ID J=150 RDS(ON),typ. Proprietary New Super-Junction Technology 700V 0.16 20A RDS(ON),typ.=0.16 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Inf

Datasheet: PTW28N50 , PTW30N50EL , PTW36N60 , PTW50N20 , PTW69N30 , PTW90N20 , SPTA60R130E , SPTA65R350E , IRF640N , SPTA65R160 , RU1H150R , RU1H150S , RU206B , RU207C , RU20C10H , RU20P4C6 , RU20P7C .

History: FQB19N20L | BUK9506-55A | SWF20N65K2 | R6530KNX | PSMN4R2-60PL | 2SJ681 | APT1004RKN

Keywords - SPTP65R160 MOSFET datasheet

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