RU207C Specs and Replacement
Type Designator: RU207C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SOT-23
RU207C substitution
- MOSFET ⓘ Cross-Reference Search
RU207C datasheet
ru207c.pdf
RU207C N-Channel Advanced Power MOSFET Features Pin Description 20V/6A, RDS (ON) =10m (Typ.)@VGS=4.5V RDS (ON) =15m (Typ.)@VGS=2.5V Low RDS (ON) Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) SOT23-3 Applications Power Management N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating... See More ⇒
Detailed specifications: PTW90N20, SPTA60R130E, SPTA65R350E, SPTP65R160, SPTA65R160, RU1H150R, RU1H150S, RU206B, IRF3710, RU20C10H, RU20P4C6, RU20P7C, RU30120R, RU3060L, RU3080L, RU3089M, RU3091M
Keywords - RU207C MOSFET specs
RU207C cross reference
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History: 2SK3829 | PNTK3139PT5G | ME2307 | 2SK2654-01
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