RU207C MOSFET. Datasheet pdf. Equivalent
Type Designator: RU207C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 125 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SOT-23
RU207C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU207C Datasheet (PDF)
..1. Size:426K ruichips
ru207c.pdf
ru207c.pdf
RU207CN-Channel Advanced Power MOSFETFeatures Pin Description 20V/6A, RDS (ON) =10m(Typ.)@VGS=4.5V RDS (ON) =15m(Typ.)@VGS=2.5V Low RDS (ON) Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)SOT23-3Applications Power ManagementN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
