All MOSFET. RU20C10H Datasheet

 

RU20C10H Datasheet and Replacement


   Type Designator: RU20C10H
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOP-8
 

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RU20C10H Datasheet (PDF)

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RU20C10H

RU20C10HComplementary Advanced Power MOSFETFeatures Pin Description N-ChannelD220V/10A,D2RDS (ON) =12m(Typ.) @ VGS=4.5VD1RDS (ON) =15m(Typ.) @ VGS=2.5VD1 P-Channel-20V/-10A,G2RDS (ON) =20m (Typ.) @ VGS=-4.5VS2RDS (ON) =30m (Typ.) @ VGS=-2.5VG1 Reliable and Ruggedpin1S1 Lead Free and Green Devices Available (RoHS Compliant)SOP-8

Datasheet: SPTA60R130E , SPTA65R350E , SPTP65R160 , SPTA65R160 , RU1H150R , RU1H150S , RU206B , RU207C , 10N60 , RU20P4C6 , RU20P7C , RU30120R , RU3060L , RU3080L , RU3089M , RU3091M , RU30D20M2 .

History: SE6020B | JMSH0403BG | 3050K | FDI036N10A | ALD1101BPAL | RU3030M3 | JMSH2010PCQ

Keywords - RU20C10H MOSFET datasheet

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