RU20C10H MOSFET. Datasheet pdf. Equivalent
Type Designator: RU20C10H
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 125 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SOP-8
RU20C10H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU20C10H Datasheet (PDF)
ru20c10h.pdf
RU20C10HComplementary Advanced Power MOSFETFeatures Pin Description N-ChannelD220V/10A,D2RDS (ON) =12m(Typ.) @ VGS=4.5VD1RDS (ON) =15m(Typ.) @ VGS=2.5VD1 P-Channel-20V/-10A,G2RDS (ON) =20m (Typ.) @ VGS=-4.5VS2RDS (ON) =30m (Typ.) @ VGS=-2.5VG1 Reliable and Ruggedpin1S1 Lead Free and Green Devices Available (RoHS Compliant)SOP-8
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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