All MOSFET. RU3060L Datasheet

 

RU3060L Datasheet and Replacement


   Type Designator: RU3060L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 53 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO-252
 

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RU3060L Datasheet (PDF)

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RU3060L

RU3060LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/53A,RDS (ON) =9m(tpy.)@VGS=10VRDS (ON) =13m(tpy.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged Fast Switching and Fully Avalanche RatedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management in DesktopComputer, Portable Equipm

 9.1. Size:314K  ruichips
ru306c.pdf pdf_icon

RU3060L

RU306C N-Channel Advanced Power MOSFET Features Pin Description 30V/5A, RDS (ON) =30m (Typ.) @ VGS=10V RDS (ON) =38m (Typ.) @ VGS=4.5V RDS (ON) =110m (Typ.) @ VGS=2.5V Low RDS (ON) Super High Dense Cell Design SOT-23 Reliable and Rugged Lead Free and Green Available Applications DC/DC Converter Load Switch N-Channel MOSFET Ab

 9.2. Size:292K  ruichips
ru3065l.pdf pdf_icon

RU3060L

RU3065LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/65A,RDS (ON) =4m (Typ.)@VGS=10VRDS (ON) =6m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching Application SystemsN-Channel MOSFETAbsolute Maximum R

Datasheet: RU1H150R , RU1H150S , RU206B , RU207C , RU20C10H , RU20P4C6 , RU20P7C , RU30120R , IRFB4115 , RU3080L , RU3089M , RU3091M , RU30D20M2 , RU30D20M3 , RU30J30M , RU30L70L , RU30S15H .

History: IPN80R900P7

Keywords - RU3060L MOSFET datasheet

 RU3060L cross reference
 RU3060L equivalent finder
 RU3060L lookup
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