All MOSFET. RU30J30M Datasheet

 

RU30J30M Datasheet and Replacement


   Type Designator: RU30J30M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PDFN5X6
 

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RU30J30M Datasheet (PDF)

 ..1. Size:412K  ruichips
 ru30j30m.pdf pdf_icon

RU30J30M

RU30J30MDual N-Channel Advanced Power MOSFETFeatures Pin Description 30V/30A,S2S2 RDS (ON) =7m(Typ.)@VGS=10VG2S2 RDS (ON) =9.5m(Typ.)@VGS=4.5V Fast Switching Speed Low gate Charge 100% avalanche testedD1D1 Lead Free and Green Devices Available (RoHS Compliant)G1D1PIN1PDFN5*6Applications Switching Application Systems DC/DC Converters

 0.1. Size:247K  ruichips
 ru30j30m3.pdf pdf_icon

RU30J30M

RU30J30M3 Dual Symmetric N-Channel MOSFETFeatures Pin Description 30V/30A, RDS (ON) =7m(Typ.)@VGS=10V RDS (ON) =10m(Typ.)@VGS=4.5VS2G2 Using Ruichips Advanced TrenchTM TechnologyS2S2 Low gate ChargeF t S it hi d F ll A l h R t d Fast Switching and Fully Avalanche Rated 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)D1G1PIN

Datasheet: RU20P7C , RU30120R , RU3060L , RU3080L , RU3089M , RU3091M , RU30D20M2 , RU30D20M3 , 2N7000 , RU30L70L , RU30S15H , RU40190R , RU40191S , RU40C40L4 , RU6070L-A , RU6085H , RU6199S .

History: IPN80R900P7

Keywords - RU30J30M MOSFET datasheet

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