RU30J30M Specs and Replacement
Type Designator: RU30J30M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 29 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: PDFN5X6
RU30J30M substitution
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RU30J30M datasheet
ru30j30m.pdf
RU30J30M Dual N-Channel Advanced Power MOSFET Features Pin Description 30V/30A, S2S2 RDS (ON) =7m (Typ.)@VGS=10V G2S2 RDS (ON) =9.5m (Typ.)@VGS=4.5V Fast Switching Speed Low gate Charge 100% avalanche tested D1D1 Lead Free and Green Devices Available (RoHS Compliant) G1D1 PIN1 PDFN5*6 Applications Switching Application Systems DC/DC Converters... See More ⇒
ru30j30m3.pdf
RU30J30M3 Dual Symmetric N-Channel MOSFET Features Pin Description 30V/30A, RDS (ON) =7m (Typ.)@VGS=10V RDS (ON) =10m (Typ.)@VGS=4.5V S2G2 Using Ruichips Advanced TrenchTM Technology S2S2 Low gate Charge F t S it hi d F ll A l h R t d Fast Switching and Fully Avalanche Rated 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant) D1G1 PIN... See More ⇒
Detailed specifications: RU20P7C, RU30120R, RU3060L, RU3080L, RU3089M, RU3091M, RU30D20M2, RU30D20M3, AON7408, RU30L70L, RU30S15H, RU40190R, RU40191S, RU40C40L4, RU6070L-A, RU6085H, RU6199S
Keywords - RU30J30M MOSFET specs
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History: VS6808DH | 2SK2402 | IRLTS2242PBF | KI007P | STW35N65DM2 | SI4953ADY-T1-E3 | FDD9407
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