All MOSFET. RU6085H Datasheet

 

RU6085H Datasheet and Replacement


   Type Designator: RU6085H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: SOP-8
 

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RU6085H Datasheet (PDF)

 ..1. Size:636K  ruichips
 ru6085h.pdf pdf_icon

RU6085H

RU6085HN-Channel Advanced Power MOSFETFeatures Pin Description 60V/80A, RDS (ON) =6m(Typ.)@VGS=10V RDS (ON) =6.5m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance Fast Switching Speed Lead Free and Green Devices Available (RoHS Compliant)SOP-8Applications Power Management. Switch Applications. Load switchN-Channel MO

 9.1. Size:288K  ruichips
 ru6080l.pdf pdf_icon

RU6085H

RU6080LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/80A,RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-252Applications SMPS High Speed Power SwitchingN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (

Datasheet: RU30D20M3 , RU30J30M , RU30L70L , RU30S15H , RU40190R , RU40191S , RU40C40L4 , RU6070L-A , AO3400 , RU6199S , RU6888 , RU7080R , RU7080S , RU7088R , RU75N08 , RU75N08L , RU75N08S .

History: STI16NM50N | IPI80N06S3-07 | NTP13N10 | HSBA3062 | NCE30P50G | NTTFS5C680NL | SWF4N70K

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