RU8590S Specs and Replacement
Type Designator: RU8590S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 188 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 480 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO263
RU8590S substitution
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RU8590S datasheet
ru8590s.pdf
RU8590S N-Channel Advanced Power MOSFET Features Pin Description 85V/90A, RDS (ON) =5.8m (Typ.)@VGS=10V D Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D D D D D D D Applications ... See More ⇒
ru8590r.pdf
RU8590R N-Channel Advanced Power MOSFET Features Pin Description 85V/90A, RDS (ON) =5.8m (Typ.)@VGS=10V Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D Applications High Speed Power Switching UPS G S N-Chan... See More ⇒
Detailed specifications: RU6888, RU7080R, RU7080S, RU7088R, RU75N08, RU75N08L, RU75N08S, RU8205BC6, 5N65, RUH1H150R, RUH30120M-C, RUH30150M, RUH3051M2, RUH40130M, RUH40140M, RUH4040M2, RUH60100M
Keywords - RU8590S MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 4N60G-TF1-T | ELM34801AA
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