All MOSFET. RU8590S Datasheet

 

RU8590S Datasheet and Replacement


   Type Designator: RU8590S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO263
 

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RU8590S Datasheet (PDF)

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RU8590S

RU8590SN-Channel Advanced Power MOSFETFeatures Pin Description 85V/90A, RDS (ON) =5.8m(Typ.)@VGS=10VD Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GSTO263DDDDDDDApplications

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RU8590S

RU8590RN-Channel Advanced Power MOSFETFeatures Pin Description 85V/90A, RDS (ON) =5.8m(Typ.)@VGS=10V Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DApplications High Speed Power Switching UPSGSN-Chan

Datasheet: RU6888 , RU7080R , RU7080S , RU7088R , RU75N08 , RU75N08L , RU75N08S , RU8205BC6 , 4435 , RUH1H150R , RUH30120M-C , RUH30150M , RUH3051M2 , RUH40130M , RUH40140M , RUH4040M2 , RUH60100M .

History: LP1480WT1G | R6007ENJ | STP40NF20 | SI7129DN | PTP01N04N | MSK2N60T | STP8N120K5

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