RUH1H150R MOSFET. Datasheet pdf. Equivalent
Type Designator: RUH1H150R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 150 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 87 nC
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 750 pF
Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm
Package: TO220
RUH1H150R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RUH1H150R Datasheet (PDF)
..1. Size:1197K ruichips
ruh1h150r.pdf
ruh1h150r.pdf
RUH1H150RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,RDS (ON) =3.2m(Typ.)@VGS=10V Advanced HEFET Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DApplications Motor Drives Uninte
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SE100130GA
