RUH1H150RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,RDS (ON) =3.2m(Typ.)@VGS=10V Advanced HEFET Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DApplications Motor Drives Uninte

RUH1H150R-AN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A, RDS (ON) =3.4m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching LossL G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)GD

RUH1H150SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,D RDS (ON) =3.2m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested100% l h t t d 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GSTO263DDDDD

RUH1H150TN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,11RDS (ON) =2.9m(Typ.)@VGS=10V910 Using Ruichips Advanced RUISGTTM Technology109 Ultra Low On-Resistance Excellent Qg&RDS(on) Performance1111 Low Gate Charge Minimizing Switching LossL G t Ch Mi i i i S it hi L2 834 76 100% Avalanche Tested56 54 Lead Fre

RUH1H150M-CN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,RDS (ON) =2.8m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-ResistanceG Excellent Qg&RDS(on) PerformanceSS Low Gate Charge Minimizing Switching LossS 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)DDDDPIN1DFN5060D

RUH1H150S-ARN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,DRDS (ON) =3.2m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested100% l h t t d 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GSTO263DDDD