STW12NA50 MOSFET. Datasheet pdf. Equivalent
Type Designator: STW12NA50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
|Id|ⓘ - Maximum Drain Current: 11.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 80 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 250 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO247
STW12NA50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW12NA50 Datasheet (PDF)
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Datasheet: STV60N05 , STV60N05-16 , STV60N06 , STV6NA60 , STV7NA40 , STV7NA60 , STV8NA50 , STW12N60 , NCEP15T14 , STW14N50 , STW15N50 , STW15NA50 , STW16N40 , STW20NA50 , STW55N10 , STW60N10 , STW75N06 .
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