LPN2010C PDF and Equivalents Search

 

LPN2010C Specs and Replacement

Type Designator: LPN2010C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.9 nS

Cossⓘ - Output Capacitance: 194.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO220

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LPN2010C datasheet

 ..1. Size:839K  cn shenzhen chip hope micro
 lpn2010c.pdf pdf_icon

LPN2010C

LPN2010C Enhancement Mode N-Channel Power MOSFET Description Features LPN2010C use advanced FSMOSTM technology Low RDS(on)&FOM to provide low RDS(on) fast switching Extremely low switching loss low gate charge and excellent avalanche characteristics. This device is Excellent stability and uniformity specially designed to get better ruggedness and Fast switchin... See More ⇒

Detailed specifications: RUH3051M2, RUH40130M, RUH40140M, RUH4040M2, RUH60100M, SIF4N65F, SIF5N65F, LPN1010C, BS170, 2N7002KS6, SR3400, SR3401, SRX3134K, D2N65, D4N65, F10N65, F12N65

Keywords - LPN2010C MOSFET specs

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