All MOSFET. LPN2010C Datasheet

 

LPN2010C Datasheet and Replacement


   Type Designator: LPN2010C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.9 nS
   Cossⓘ - Output Capacitance: 194.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO220
 

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LPN2010C Datasheet (PDF)

 ..1. Size:839K  cn shenzhen chip hope micro
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LPN2010C

LPN2010C Enhancement Mode N-Channel Power MOSFET Description Features LPN2010C use advanced FSMOSTM technology Low RDS(on)&FOM to provide low RDS(on) fast switching Extremely low switching loss low gate chargeand excellent avalanche characteristics. This device is Excellent stability and uniformity specially designed to get better ruggedness and Fast switchin

Datasheet: RUH3051M2 , RUH40130M , RUH40140M , RUH4040M2 , RUH60100M , SIF4N65F , SIF5N65F , LPN1010C , 18N50 , 2N7002KS6 , SR3400 , SR3401 , SRX3134K , D2N65 , D4N65 , F10N65 , F12N65 .

History: CS730FA9H | IRFU110P

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