2060K. Datasheet and Replacement
Type Designator: 2060K.
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 64 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 365 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO-252
2060K. substitution
2060K. Datasheet (PDF)
nce2060k.pdf
Pb Free ProductNCE2060Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON)
Datasheet: SRX3134K , D2N65 , D4N65 , F10N65 , F12N65 , .8205A , .8205S , .8205P , IRF520 , 2301P , 2302P , 3050K , 3060K , 3080K , 3090K , 3415E , 4080K .
History: AP13N50R | 2SK1493 | 2SK4202-S19-AY | 2SJ646 | 2SJ554 | NTP6412AN | SI4403DDY
Keywords - 2060K. MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AP13N50R | 2SK1493 | 2SK4202-S19-AY | 2SJ646 | 2SJ554 | NTP6412AN | SI4403DDY
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