2060K. Datasheet and Replacement
Type Designator: 2060K.
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 64 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 365 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO-252
- MOSFET Cross-Reference Search
2060K. Datasheet (PDF)
nce2060k.pdf

Pb Free ProductNCE2060Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: NP50P04KDG | AP9926GEO | RW1C020UN | IRF441 | GSM3050S | JCS10N65S | STD4N62K3
Keywords - 2060K. MOSFET datasheet
2060K. cross reference
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History: NP50P04KDG | AP9926GEO | RW1C020UN | IRF441 | GSM3050S | JCS10N65S | STD4N62K3



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