All MOSFET. 3050K Datasheet

 

3050K MOSFET. Datasheet pdf. Equivalent


   Type Designator: 3050K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-252

 3050K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

3050K Datasheet (PDF)

 ..1. Size:694K  cn shenzhen fuman elec
3050k.pdf

3050K
3050K

FM,FM WWW.SZLCSC.COM,SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.3050KS&CIC1691 N-Channel Trench Power MOSFETN-C hannel Trench Power MOSFETGeneral DescriptionThe 3050K uses advanced trenc

 0.1. Size:372K  ncepower
nce3050ka.pdf

3050K
3050K

Pb Free ProductNCE3050KAhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

 0.2. Size:399K  ncepower
nce3050k.pdf

3050K
3050K

Pb Free Producthttp://www.ncepower.com NCE3050KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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