All MOSFET. 3050K Datasheet

 

3050K Datasheet and Replacement


   Type Designator: 3050K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-252
 

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3050K Datasheet (PDF)

 ..1. Size:694K  cn shenzhen fuman elec
 3050k.pdf pdf_icon

3050K

FM,FM WWW.SZLCSC.COM,SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.3050KS&CIC1691 N-Channel Trench Power MOSFETN-C hannel Trench Power MOSFETGeneral DescriptionThe 3050K uses advanced trenc

 0.1. Size:372K  ncepower
 nce3050ka.pdf pdf_icon

3050K

Pb Free ProductNCE3050KAhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

 0.2. Size:399K  ncepower
 nce3050k.pdf pdf_icon

3050K

Pb Free Producthttp://www.ncepower.com NCE3050KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =50A RDS(ON)

Datasheet: F10N65 , F12N65 , .8205A , .8205S , .8205P , 2060K. , 2301P , 2302P , AON6380 , 3060K , 3080K , 3090K , 3415E , 4080K , 6888K , SC8205 , SC8205S .

History: CRJD390N65GC | R6009ENJ

Keywords - 3050K MOSFET datasheet

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