PNM3FD20V1E Specs and Replacement
Type Designator: PNM3FD20V1E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 13 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: DFN1006-3
PNM3FD20V1E substitution
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PNM3FD20V1E datasheet
pnm3fd20v1e.pdf
PNM3FD20V1E N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary V (V) R (m ) I (A) DS DS(on) D G(1) 200@ V =4.5V GS D(3) S(2) 20 250@ V =2.5V 1 GS 310@ V =1.8V GS Top View Absolute maximum rating@25 Parameter Symbol Value Units Drain-Source Voltage V 20... See More ⇒
Detailed specifications: 3090K, 3415E, 4080K, 6888K, SC8205, SC8205S, PDNM6ET20V05, PNM3FD201E0, IRFZ46N, PNM523T30V01, PNM723T30V01, PNMT6N1, PNMT6N1-LB, PNMT6N2, PNMT8N1, PPMT2301, PJ2301-AU
Keywords - PNM3FD20V1E MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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