All MOSFET. PNMT8N1 Datasheet

 

PNMT8N1 Datasheet and Replacement


   Type Designator: PNMT8N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 13 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: DFN3X2X0.75
 

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PNMT8N1 Datasheet (PDF)

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PNMT8N1

PNMT8N1 Transistor with N-MOSFET Feature Top View This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. C1,7,8,9 G 5 D 4,10 PNMT8N1 is composed by a transistor and a MOSFET Transistor: Very low collector to emitter saturation voltage S E B 6 2 3 DC current gain >100 3A continuous collector current PNP e

Datasheet: PDNM6ET20V05 , PNM3FD201E0 , PNM3FD20V1E , PNM523T30V01 , PNM723T30V01 , PNMT6N1 , PNMT6N1-LB , PNMT6N2 , IRF9640 , PPMT2301 , PJ2301-AU , PJA3415AE , PJA3416AE , PJA3417 , PJA3419 , PJA3439 , PJA3441 .

History: NCEB301Q

Keywords - PNMT8N1 MOSFET datasheet

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