PNMT8N1 Specs and Replacement
Type Designator: PNMT8N1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 13 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: DFN3X2X0.75
PNMT8N1 substitution
- MOSFET ⓘ Cross-Reference Search
PNMT8N1 datasheet
pnmt8n1.pdf
PNMT8N1 Transistor with N-MOSFET Feature Top View This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. C 1,7,8,9 G 5 D 4,10 PNMT8N1 is composed by a transistor and a MOSFET Transistor Very low collector to emitter saturation voltage S E B 6 2 3 DC current gain >100 3A continuous collector current PNP e... See More ⇒
Detailed specifications: PDNM6ET20V05, PNM3FD201E0, PNM3FD20V1E, PNM523T30V01, PNM723T30V01, PNMT6N1, PNMT6N1-LB, PNMT6N2, K2611, PPMT2301, PJ2301-AU, PJA3415AE, PJA3416AE, PJA3417, PJA3419, PJA3439, PJA3441
Keywords - PNMT8N1 MOSFET specs
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