All MOSFET. PJ2301-AU Datasheet

 

PJ2301-AU Datasheet and Replacement


   Type Designator: PJ2301-AU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 3.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.4 nC
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 43 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT-23
 

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PJ2301-AU Datasheet (PDF)

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PJ2301-AU

PPJ2301-AU 20V P-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm) Voltage -20 V Current -3.1A Features RDS(ON) , VGS@-4.5V, ID@-3.1A

 8.1. Size:290K  panjit
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PJ2301-AU

PJ230120V P-Channel Enhancement Mode MOSFETFEATURES RDS(ON), VGS@-1.8V,ID@-1.5A=200m RDS(ON), VGS@-4.5V,ID@-2.2A=105m0.120(3.04) Advanced Trench Process Technology0.110(2.80) High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC converters Low gate charge 0.056(1

 9.1. Size:214K  panjit
pj2306.pdf pdf_icon

PJ2301-AU

PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD ProtectedUnitinch(mm)SOT-23FEATURES RDS(ON), VGS@10V,IDS@3.2A=65m RDS(ON), VGS@4.5V,IDS@2.8A=85m0.120(3.04)0.110(2.80) Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Load Switch, PWM Applic

Datasheet: PNM3FD20V1E , PNM523T30V01 , PNM723T30V01 , PNMT6N1 , PNMT6N1-LB , PNMT6N2 , PNMT8N1 , PPMT2301 , MMD60R360PRH , PJA3415AE , PJA3416AE , PJA3417 , PJA3419 , PJA3439 , PJA3441 , PJA3460 , PJL9418 .

History: SMK0965F

Keywords - PJ2301-AU MOSFET datasheet

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