PJ2301-AU PDF and Equivalents Search

 

PJ2301-AU Specs and Replacement

Type Designator: PJ2301-AU

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 43 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT-23

PJ2301-AU substitution

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PJ2301-AU datasheet

 ..1. Size:380K  panjit
 pj2301-au.pdf pdf_icon

PJ2301-AU

PPJ2301-AU 20V P-Channel Enhancement Mode MOSFET SOT-23 Unit inch(mm) Voltage -20 V Current -3.1A Features RDS(ON) , VGS@-4.5V, ID@-3.1A... See More ⇒

 8.1. Size:290K  panjit
 pj2301.pdf pdf_icon

PJ2301-AU

PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES RDS(ON), VGS@-1.8V,ID@-1.5A=200m RDS(ON), VGS@-4.5V,ID@-2.2A=105m 0.120(3.04) Advanced Trench Process Technology 0.110(2.80) High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC converters Low gate charge 0.056(1... See More ⇒

 9.1. Size:214K  panjit
 pj2306.pdf pdf_icon

PJ2301-AU

PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected Unit inch(mm) SOT-23 FEATURES RDS(ON), VGS@10V,IDS@3.2A=65m RDS(ON), VGS@4.5V,IDS@2.8A=85m 0.120(3.04) 0.110(2.80) Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Load Switch, PWM Applic... See More ⇒

Detailed specifications: PNM3FD20V1E, PNM523T30V01, PNM723T30V01, PNMT6N1, PNMT6N1-LB, PNMT6N2, PNMT8N1, PPMT2301, RU7088R, PJA3415AE, PJA3416AE, PJA3417, PJA3419, PJA3439, PJA3441, PJA3460, PJL9418

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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