All MOSFET. PJA3416AE Datasheet

 

PJA3416AE Datasheet and Replacement


   Type Designator: PJA3416AE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 96 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SOT-23
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PJA3416AE Datasheet (PDF)

 ..1. Size:389K  panjit
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PJA3416AE

PPJA3416AE 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit: inch(mm) Voltage 20 V Current 6.5A Features RDS(ON) , VGS@4.5V, ID@6.5A

 7.1. Size:224K  panjit
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PJA3416AE

PPJA3416 20V N-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm)20 V 5.8A Voltage Current Features RDS(ON) , VGS@4.5V, ID@5.8A

 8.1. Size:206K  panjit
 pja3413.pdf pdf_icon

PJA3416AE

PPJA3413 20V P-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm)Voltage -20 V Current -3.4A Features RDS(ON) , VGS@-4.5V, ID@-3.4A

 8.2. Size:206K  panjit
 pja3412.pdf pdf_icon

PJA3416AE

PPJA3412 20V N-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm)20 V 4.1A Voltage Current Features RDS(ON) , VGS@4.5V, ID@4.1A

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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

Keywords - PJA3416AE MOSFET datasheet

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