PJA3416AE MOSFET. Datasheet pdf. Equivalent

   Type Designator: PJA3416AE
   Marking Code: A6E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.6 nC
   Rise Time (tr): 46 nS
   Drain-Source Capacitance (Cd): 96 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm
   Package: SOT-23

PJA3416AE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

PJA3416AE Datasheet (PDF)

..1. Size:389K panjit
pja3416ae.pdf

PPJA3416AE 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit: inch(mm) Voltage 20 V Current 6.5A Features RDS(ON) , VGS@4.5V, ID@6.5A

7.1. Size:224K panjit
pja3416.pdf

PPJA3416 20V N-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm)20 V 5.8A Voltage Current Features RDS(ON) , VGS@4.5V, ID@5.8A

8.1. Size:206K panjit
pja3413.pdf

PPJA3413 20V P-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm)Voltage -20 V Current -3.4A Features RDS(ON) , VGS@-4.5V, ID@-3.4A

8.2. Size:206K panjit
pja3412.pdf

PPJA3412 20V N-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm)20 V 4.1A Voltage Current Features RDS(ON) , VGS@4.5V, ID@4.1A

8.3. Size:202K panjit
pja3414.pdf

PPJA3414 20V N-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm)20 V 5.2A Voltage Current Features RDS(ON) , VGS@4.5V, ID@5.2A

8.4. Size:394K panjit
pja3415ae.pdf

PPJA3415AE 20V P-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit : inch(mm) Voltage -20 V Current -4.3A Features RDS(ON) , VGS@-4.5V, ID@-4.3A

8.5. Size:218K panjit
pja3415.pdf