All MOSFET. PJA3417 Datasheet

 

PJA3417 Datasheet and Replacement


   Type Designator: PJA3417
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 5.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 153 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SC-59
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PJA3417 Datasheet (PDF)

 ..1. Size:294K  panjit
 pja3417.pdf pdf_icon

PJA3417

PPJA3417 20V P-Channel Enhancement Mode MOSFET SC-59 Unit : inch(mm) Voltage -20 V Current -5.2A Features RDS(ON) , VGS@-4.5V, ID@-5.2A

 8.1. Size:206K  panjit
 pja3413.pdf pdf_icon

PJA3417

PPJA3413 20V P-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm)Voltage -20 V Current -3.4A Features RDS(ON) , VGS@-4.5V, ID@-3.4A

 8.2. Size:206K  panjit
 pja3412.pdf pdf_icon

PJA3417

PPJA3412 20V N-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm)20 V 4.1A Voltage Current Features RDS(ON) , VGS@4.5V, ID@4.1A

 8.3. Size:202K  panjit
 pja3414.pdf pdf_icon

PJA3417

PPJA3414 20V N-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm)20 V 5.2A Voltage Current Features RDS(ON) , VGS@4.5V, ID@5.2A

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History: SQ9407EY-T1 | CHM85A3PAGP | TK7P65W | ALD1103DB | SFFX054Z

Keywords - PJA3417 MOSFET datasheet

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