All MOSFET. PJW4N06A Datasheet

 

PJW4N06A MOSFET. Datasheet pdf. Equivalent


   Type Designator: PJW4N06A
   Marking Code: W4N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.1 nC
   trⓘ - Rise Time: 7.3 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT-223

 PJW4N06A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PJW4N06A Datasheet (PDF)

 ..1. Size:380K  panjit
 pjw4n06a.pdf

PJW4N06A PJW4N06A

PPJW4N06A 60V N-Channel Enhancement Mode MOSFET SOT-223 60 V 4.0 A Voltage Current Features RDS(ON), VGS@10V,ID@3.0A

 0.1. Size:500K  panjit
 pjw4n06a-au.pdf

PJW4N06A PJW4N06A

PPJW4N06A-AU 60V N-Channel Enhancement Mode MOSFET SOT-223 60 V 4 A Voltage Current Features 1 RDS(ON), VGS@10V, ID@3A

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: PK632BA

 

 
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