PJW4N06A MOSFET. Datasheet pdf. Equivalent
Type Designator: PJW4N06A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 7.3 nS
Cossⓘ - Output Capacitance: 39 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT-223
PJW4N06A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PJW4N06A Datasheet (PDF)
..1. Size:380K panjit
pjw4n06a.pdf
pjw4n06a.pdf
PPJW4N06A 60V N-Channel Enhancement Mode MOSFET SOT-223 60 V 4.0 A Voltage Current Features RDS(ON), VGS@10V,ID@3.0A
0.1. Size:500K panjit
pjw4n06a-au.pdf
pjw4n06a-au.pdf
PPJW4N06A-AU 60V N-Channel Enhancement Mode MOSFET SOT-223 60 V 4 A Voltage Current Features 1 RDS(ON), VGS@10V, ID@3A
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NCEP0109AR