PJW4N06A Datasheet and Replacement
Type Designator: PJW4N06A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.3 nS
Cossⓘ - Output Capacitance: 39 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT-223
PJW4N06A substitution
PJW4N06A Datasheet (PDF)
pjw4n06a.pdf
PPJW4N06A 60V N-Channel Enhancement Mode MOSFET SOT-223 60 V 4.0 A Voltage Current Features RDS(ON), VGS@10V,ID@3.0A
pjw4n06a-au.pdf
PPJW4N06A-AU 60V N-Channel Enhancement Mode MOSFET SOT-223 60 V 4 A Voltage Current Features 1 RDS(ON), VGS@10V, ID@3A
Datasheet: PJA3439 , PJA3441 , PJA3460 , PJL9418 , PJQ1900 , PJQ5476AL , PJS6403 , PJV1702 , IRF540 , PJW4N06A-AU , PJW7N06A , PJX8808 , PPJA3401A , PPJD50N10AL , PPJQ5494 , PPJT7600 , PT4407 .
History: STB150NF55 | FDD3N40TM | HY5204W | AP65SL190AWL | VBM1402 | 2SK65 | WSD30160DN56
Keywords - PJW4N06A MOSFET datasheet
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History: STB150NF55 | FDD3N40TM | HY5204W | AP65SL190AWL | VBM1402 | 2SK65 | WSD30160DN56
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