All MOSFET. PJW4N06A-AU Datasheet

 

PJW4N06A-AU Datasheet and Replacement


   Type Designator: PJW4N06A-AU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7.3 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT-223
 

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PJW4N06A-AU Datasheet (PDF)

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PJW4N06A-AU

PPJW4N06A-AU 60V N-Channel Enhancement Mode MOSFET SOT-223 60 V 4 A Voltage Current Features 1 RDS(ON), VGS@10V, ID@3A

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PJW4N06A-AU

PPJW4N06A 60V N-Channel Enhancement Mode MOSFET SOT-223 60 V 4.0 A Voltage Current Features RDS(ON), VGS@10V,ID@3.0A

Datasheet: PJA3441 , PJA3460 , PJL9418 , PJQ1900 , PJQ5476AL , PJS6403 , PJV1702 , PJW4N06A , IRF540N , PJW7N06A , PJX8808 , PPJA3401A , PPJD50N10AL , PPJQ5494 , PPJT7600 , PT4407 , PT4606 .

History: HYG023N03LR1U | 18N20

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