PJW4N06A-AU Specs and Replacement
Type Designator: PJW4N06A-AU
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.3 nS
Cossⓘ - Output Capacitance: 39 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT-223
PJW4N06A-AU substitution
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PJW4N06A-AU datasheet
pjw4n06a-au.pdf
PPJW4N06A-AU 60V N-Channel Enhancement Mode MOSFET SOT-223 60 V 4 A Voltage Current Features 1 RDS(ON), VGS@10V, ID@3A... See More ⇒
pjw4n06a.pdf
PPJW4N06A 60V N-Channel Enhancement Mode MOSFET SOT-223 60 V 4.0 A Voltage Current Features RDS(ON), VGS@10V,ID@3.0A... See More ⇒
Detailed specifications: PJA3441, PJA3460, PJL9418, PJQ1900, PJQ5476AL, PJS6403, PJV1702, PJW4N06A, IRF540, PJW7N06A, PJX8808, PPJA3401A, PPJD50N10AL, PPJQ5494, PPJT7600, PT4407, PT4606
Keywords - PJW4N06A-AU MOSFET specs
PJW4N06A-AU cross reference
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PJW4N06A-AU replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: FDMQ8203 | 4N60KL-TMS4-T
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