PJW7N06A MOSFET. Datasheet pdf. Equivalent
Type Designator: PJW7N06A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 6.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 63 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: SOT-223
PJW7N06A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PJW7N06A Datasheet (PDF)
..1. Size:355K panjit
pjw7n06a.pdf
pjw7n06a.pdf
PPJW7N06A 60V N-Channel Enhancement Mode MOSFET SOT-223 60 V 6.6 A Voltage Current Features 1 RDS(ON) , VGS@10V, ID@6A
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
