PJW7N06A Datasheet and Replacement
Type Designator: PJW7N06A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 63 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: SOT-223
PJW7N06A substitution
PJW7N06A Datasheet (PDF)
pjw7n06a.pdf
PPJW7N06A 60V N-Channel Enhancement Mode MOSFET SOT-223 60 V 6.6 A Voltage Current Features 1 RDS(ON) , VGS@10V, ID@6A
Datasheet: PJA3460 , PJL9418 , PJQ1900 , PJQ5476AL , PJS6403 , PJV1702 , PJW4N06A , PJW4N06A-AU , 50N06 , PJX8808 , PPJA3401A , PPJD50N10AL , PPJQ5494 , PPJT7600 , PT4407 , PT4606 , PT4953 .
History: APQ84SN06A | IXFT30N60X
Keywords - PJW7N06A MOSFET datasheet
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History: APQ84SN06A | IXFT30N60X
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