PPJD50N10AL Specs and Replacement
Type Designator: PPJD50N10AL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 42 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 135 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO-252AA
PPJD50N10AL substitution
- MOSFET ⓘ Cross-Reference Search
PPJD50N10AL datasheet
ppjd50n10al.pdf
PPJD50N10AL 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 42 A Features RDS(ON) , VGS@10V, ID@20A... See More ⇒
Detailed specifications: PJQ5476AL, PJS6403, PJV1702, PJW4N06A, PJW4N06A-AU, PJW7N06A, PJX8808, PPJA3401A, IRF640, PPJQ5494, PPJT7600, PT4407, PT4606, PT4953, PT8810, PT9435, PTD12N10
Keywords - PPJD50N10AL MOSFET specs
PPJD50N10AL cross reference
PPJD50N10AL equivalent finder
PPJD50N10AL pdf lookup
PPJD50N10AL substitution
PPJD50N10AL replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 4N60KL-TMS4-T | SI4848ADY | FDMQ8203
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
Popular searches
3sk41 | 2sc2240 transistor | c3198 | 2sc793 | 2sd313 replacement | 2n4249 | a1013 transistor | 2sc2705