PPJD50N10AL Datasheet and Replacement
Type Designator: PPJD50N10AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 42 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO-252AA
PPJD50N10AL substitution
PPJD50N10AL Datasheet (PDF)
ppjd50n10al.pdf
PPJD50N10AL 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 42 A Features RDS(ON) , VGS@10V, ID@20A
Datasheet: PJQ5476AL , PJS6403 , PJV1702 , PJW4N06A , PJW4N06A-AU , PJW7N06A , PJX8808 , PPJA3401A , IRFZ44 , PPJQ5494 , PPJT7600 , PT4407 , PT4606 , PT4953 , PT8810 , PT9435 , PTD12N10 .
History: NCE1503S | STD65N55LF3 | BLF888A
Keywords - PPJD50N10AL MOSFET datasheet
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History: NCE1503S | STD65N55LF3 | BLF888A
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