PT4407 Datasheet. Specs and Replacement

Type Designator: PT4407  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SOP-8

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PT4407 datasheet

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PT4407

PT4407 30V P-Channel Enhancement Mode Power MOSFET SOP-8 General Features VDS = -30V,ID = -12A RDS(ON) ... See More ⇒

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PT4407

CMPT4401 NPN CMPT4403 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPT4401 and SILICON TRANSISTORS CMPT4403 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier and switching applications. MARKING CODES CMP... See More ⇒

Detailed specifications: PJW4N06A, PJW4N06A-AU, PJW7N06A, PJX8808, PPJA3401A, PPJD50N10AL, PPJQ5494, PPJT7600, IRFB4110, PT4606, PT4953, PT8810, PT9435, PTD12N10, PTD15N10, PTD20N06, PTD3004

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