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PT4407 Spec and Replacement


   Type Designator: PT4407
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOP-8

 PT4407 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PT4407 Specs

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PT4407

PT4407 30V P-Channel Enhancement Mode Power MOSFET SOP-8 General Features VDS = -30V,ID = -12A RDS(ON) ... See More ⇒

 9.1. Size:324K  central
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PT4407

CMPT4401 NPN CMPT4403 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPT4401 and SILICON TRANSISTORS CMPT4403 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier and switching applications. MARKING CODES CMP... See More ⇒

Detailed specifications: PJW4N06A , PJW4N06A-AU , PJW7N06A , PJX8808 , PPJA3401A , PPJD50N10AL , PPJQ5494 , PPJT7600 , IRFB4110 , PT4606 , PT4953 , PT8810 , PT9435 , PTD12N10 , PTD15N10 , PTD20N06 , PTD3004 .

History: AP4435B | ZVN4210GTA | TK13A55DA | STP36N06L | UT3401 | PSMN7R5-60YL | PTD12N10

Keywords - PT4407 MOSFET specs

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