PT4606 Datasheet. Specs and Replacement
Type Designator: PT4606 📄📄
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 62 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOP-8
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PT4606 datasheet
pt4606.pdf
PT4606 Complementary High Density Trench MOSFET PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) VDSS ID RDS(on) (m ) Max VDSS ID RDS(on) (m ) Max 6.5A 28 @ VGS= 10V -6A 37 @ VGS= -10V 30V -30V 5A 41 @ VG 4.5V -5A 57 @ VGS= -4.5V S= D 1 D 2 SOP-8 S1 1 8 D1 2 G 1 7 D1 3 6 S 2 D2 4 5 G 2 D 2 S 1 S 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Param... See More ⇒
Detailed specifications: PJW4N06A-AU, PJW7N06A, PJX8808, PPJA3401A, PPJD50N10AL, PPJQ5494, PPJT7600, PT4407, IRF640N, PT4953, PT8810, PT9435, PTD12N10, PTD15N10, PTD20N06, PTD3004, PTD3006
Keywords - PT4606 MOSFET specs
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History: AP260N12TLG1 | WST3424 | HGB220N25S | HUFA76429D3 | HGB190N15S | SML80T27
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