All MOSFET. PT4953 Datasheet

 

PT4953 Datasheet and Replacement


   Type Designator: PT4953
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.063 Ohm
   Package: SOP-8
 

 PT4953 substitution

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PT4953 Datasheet (PDF)

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PT4953

PT4953 -30V P-Channel Enhancement Mode MOSFETVDS= -30V RDS(ON), Vgs@-10V, Ids@-4.5A = 63m RDS(ON), Vgs@-4.5V, Ids@-3.6A = 90m FeaturesAdvanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM Package Dimensions D1 D1 D2 D28 7 6 51 2 3 4S1 G1 S2 G2Millimeter Millimeter REF. REF. Min. Max. Min. Max.A

Datasheet: PJW7N06A , PJX8808 , PPJA3401A , PPJD50N10AL , PPJQ5494 , PPJT7600 , PT4407 , PT4606 , 10N60 , PT8810 , PT9435 , PTD12N10 , PTD15N10 , PTD20N06 , PTD3004 , PTD3006 , PTD4080B .

History: RU20P3B

Keywords - PT4953 MOSFET datasheet

 PT4953 cross reference
 PT4953 equivalent finder
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