PT8810 Datasheet and Replacement
Type Designator: PT8810
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 145 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TSSOP-8
PT8810 substitution
PT8810 Datasheet (PDF)
pt8810.pdf

PT8810 Dual N-Channel MOSFETDESCRIPTION The PT8810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. TSSOP-8FeaturesD1/D2 1 8 D1/D22 7S1 S2VDS (V) = 20V3 6S1 S2ID = 6A (VGS = 10V)4 5
Datasheet: PJX8808 , PPJA3401A , PPJD50N10AL , PPJQ5494 , PPJT7600 , PT4407 , PT4606 , PT4953 , IRF3710 , PT9435 , PTD12N10 , PTD15N10 , PTD20N06 , PTD3004 , PTD3006 , PTD4080B , PTD4N60 .
History: AP9973GJ-HF | SFF440 | SIHF9530S | CEDM7004VL
Keywords - PT8810 MOSFET datasheet
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History: AP9973GJ-HF | SFF440 | SIHF9530S | CEDM7004VL



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