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PT8810 Spec and Replacement


   Type Designator: PT8810
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TSSOP-8

 PT8810 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PT8810 Specs

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PT8810

PT8810 Dual N-Channel MOSFET DESCRIPTION The PT8810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. TSSOP-8 Features D1/D2 1 8 D1/D2 2 7 S1 S2 VDS (V) = 20V 3 6 S1 S2 ID = 6A (VGS = 10V) 4 5... See More ⇒

Detailed specifications: PJX8808 , PPJA3401A , PPJD50N10AL , PPJQ5494 , PPJT7600 , PT4407 , PT4606 , PT4953 , AO3400 , PT9435 , PTD12N10 , PTD15N10 , PTD20N06 , PTD3004 , PTD3006 , PTD4080B , PTD4N60 .

History: INK0112AC1 | SL7N65C | 2SK125

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