PT8810 Datasheet. Specs and Replacement
Type Designator: PT8810 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 145 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TSSOP-8
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PT8810 substitution
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PT8810 datasheet
pt8810.pdf
PT8810 Dual N-Channel MOSFET DESCRIPTION The PT8810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. TSSOP-8 Features D1/D2 1 8 D1/D2 2 7 S1 S2 VDS (V) = 20V 3 6 S1 S2 ID = 6A (VGS = 10V) 4 5... See More ⇒
Detailed specifications: PJX8808, PPJA3401A, PPJD50N10AL, PPJQ5494, PPJT7600, PT4407, PT4606, PT4953, AO3400, PT9435, PTD12N10, PTD15N10, PTD20N06, PTD3004, PTD3006, PTD4080B, PTD4N60
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