PT9435 Datasheet. Specs and Replacement

Type Designator: PT9435  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.33 nS

Cossⓘ - Output Capacitance: 90.96 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOP-8

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PT9435 datasheet

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PT9435

PT9435 -30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-5.3A = 60m RDS(ON), Vgs@-4.5V, Ids@-4.2A = 95m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM Package Dimensions Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 5.80 6.20 M 0.10 0.25 B 4.80 5.00 H 0.31 0... See More ⇒

Detailed specifications: PPJA3401A, PPJD50N10AL, PPJQ5494, PPJT7600, PT4407, PT4606, PT4953, PT8810, IRFB4227, PTD12N10, PTD15N10, PTD20N06, PTD3004, PTD3006, PTD4080B, PTD4N60, PTD50N06

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