PT9435 MOSFET. Datasheet pdf. Equivalent
Type Designator: PT9435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 5.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.35 nC
trⓘ - Rise Time: 2.33 nS
Cossⓘ - Output Capacitance: 90.96 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOP-8
PT9435 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PT9435 Datasheet (PDF)
pt9435.pdf
PT9435 -30V P-Channel Enhancement Mode MOSFETVDS= -30V RDS(ON), Vgs@-10V, Ids@-5.3A = 60m RDS(ON), Vgs@-4.5V, Ids@-4.2A = 95m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM Package Dimensions Millimeter Millimeter REF. REF. Min. Max. Min. Max.A 5.80 6.20 M 0.10 0.25B 4.80 5.00 H 0.31 0
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: NCEP01T12 | NTGS3441 | IPI65R150CFD | SP8076E
History: NCEP01T12 | NTGS3441 | IPI65R150CFD | SP8076E
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918