PTD12N10 Datasheet. Specs and Replacement

Type Designator: PTD12N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.6 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO252

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PTD12N10 datasheet

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PTD12N10

PTD12N10 100V/12A N-Channel Advanced PowerMOSFET Features VDS=100V; ID=12A RDS(ON)... See More ⇒

Detailed specifications: PPJD50N10AL, PPJQ5494, PPJT7600, PT4407, PT4606, PT4953, PT8810, PT9435, IRF3710, PTD15N10, PTD20N06, PTD3004, PTD3006, PTD4080B, PTD4N60, PTD50N06, PTD60N02

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