All MOSFET. STW60N10 Datasheet

 

STW60N10 Datasheet and Replacement


   Type Designator: STW60N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 120 nC
   tr ⓘ - Rise Time: 270 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO247
 

 STW60N10 substitution

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STW60N10 Datasheet (PDF)

 ..1. Size:389K  st
 stw60n10.pdf pdf_icon

STW60N10

STH60N10/FISTW60N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTH60N10 100 V

 8.1. Size:202K  st
 stw60ne10.pdf pdf_icon

STW60N10

STW60NE10N - CHANNEL 100V - 0.016 - 60A TO-247STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTW60NE10 100 V

 8.2. Size:569K  st
 stw60n65m5 stfw60n65m5.pdf pdf_icon

STW60N10

STW60N65M5STFW60N65M5N-channel 650 V, 0.049 , 46 A MDmesh V Power MOSFETin TO-247, TO-3PFFeaturesVDSS @ RDS(on) Order codes IDTJmax maxSTFW60N65M5111710 V

 8.3. Size:751K  st
 stw60nm50n.pdf pdf_icon

STW60N10

STW60NM50NN-channel 500 V, 0.035 , 68 A, MDmesh II Power MOSFET in a TO-247 packageDatasheet - production dataFeatures Order code VDSS (@Tjmax) RDS(on) max IDSTW60NM50N 550 V

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Datasheet: STW12N60 , STW12NA50 , STW14N50 , STW15N50 , STW15NA50 , STW16N40 , STW20NA50 , STW55N10 , IRF740 , STW75N06 , STW80N05 , STW8N80 , STW9NA60 , TA17632 , TA17650 , TA17656 , TA75307 .

Keywords - STW60N10 MOSFET datasheet

 STW60N10 cross reference
 STW60N10 equivalent finder
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