STW60N10 MOSFET Datasheet: N-Ch, 100V, 60A. Full specification with pinout and replacement list

STW60N10 Specs and Replacement

Type Designator: STW60N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 270 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO247

STW60N10 substitution

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STW60N10 datasheet

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STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STH60N10 100 V ... See More ⇒

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STW60NE10 N - CHANNEL 100V - 0.016 - 60A TO-247 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STW60NE10 100 V ... See More ⇒

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STW60N65M5 STFW60N65M5 N-channel 650 V, 0.049 , 46 A MDmesh V Power MOSFET in TO-247, TO-3PF Features VDSS @ RDS(on) Order codes ID TJmax max STFW60N65M5 1 1 1 710 V ... See More ⇒

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