PTD20N06 Datasheet. Specs and Replacement
Type Designator: PTD20N06 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
Package: TO252
📄📄 Copy
PTD20N06 substitution
- MOSFET ⓘ Cross-Reference Search
PTD20N06 datasheet
ptd20n06.pdf
PTD20N06 60 N-Channel Advanced Power MOSFET 0V/20A Features General Features Low On-Resistance VDS =60V,ID =20A Fast Switching RDS(ON) ... See More ⇒
Detailed specifications: PPJT7600, PT4407, PT4606, PT4953, PT8810, PT9435, PTD12N10, PTD15N10, AON6414A, PTD3004, PTD3006, PTD4080B, PTD4N60, PTD50N06, PTD60N02, PTD7N65, PTD80N06
Keywords - PTD20N06 MOSFET specs
PTD20N06 cross reference
PTD20N06 equivalent finder
PTD20N06 pdf lookup
PTD20N06 substitution
PTD20N06 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
