PTD3006 Datasheet. Specs and Replacement

Type Designator: PTD3006  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 58 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO252

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PTD3006 datasheet

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PTD3006

PTD3006 30V/80A N-Channel Advanced Power MOSFET Features Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description D PTD3006 designed by the trench process techniques to achieve extremely low on-resistance. Additional features of this design can operate at high junction tem... See More ⇒

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PTD3006

PTD3004 30V/50A N-Channel Advanced Power MOSFET Features Low RDS(on) @ 5V Logic. BVDSS 30 V 5V Logic Level Control ID 50 A 0 TO-252 SMD Package RDSON@VGS=10V 10 m Pb-Free, RoHS Compliant RDSON@VGS=5V 13 m Applications High Side Load Switch Battery Switch Optimized for Power Management Applications for S Portable Products, such a... See More ⇒

Detailed specifications: PT4606, PT4953, PT8810, PT9435, PTD12N10, PTD15N10, PTD20N06, PTD3004, 2N7000, PTD4080B, PTD4N60, PTD50N06, PTD60N02, PTD7N65, PTD80N06, PTF10N65, PTF10HN08

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