PTD3006 Datasheet and Replacement
Type Designator: PTD3006
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 58 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO252
PTD3006 substitution
PTD3006 Datasheet (PDF)
ptd3006.pdf

PTD3006 30V/80A N-Channel Advanced Power MOSFET Features Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description D PTD3006 designed by the trench process techniques to achieve extremely low on-resistance. Additional features of this design can operate at high junction tem
ptd3004.pdf

PTD3004 30V/50A N-Channel Advanced Power MOSFET Features Low RDS(on) @ 5V Logic. BVDSS 30 V 5V Logic Level Control ID 50 A 0 TO-252 SMD Package RDSON@VGS=10V 10 m Pb-Free, RoHS Compliant RDSON@VGS=5V 13 m Applications High Side Load Switch Battery Switch Optimized for Power Management Applications for S Portable Products, such a
Datasheet: PT4606 , PT4953 , PT8810 , PT9435 , PTD12N10 , PTD15N10 , PTD20N06 , PTD3004 , IRF9540 , PTD4080B , PTD4N60 , PTD50N06 , PTD60N02 , PTD7N65 , PTD80N06 , PTF10N65 , PTF10HN08 .
History: NCE65T360 | BRCS080N02ZJ | BRCS120N03YA | NCV8408 | AM4915P
Keywords - PTD3006 MOSFET datasheet
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PTD3006 replacement
History: NCE65T360 | BRCS080N02ZJ | BRCS120N03YA | NCV8408 | AM4915P



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